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BFS483H6327XTSA1

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BFS483H6327XTSA1

Voltage - Collector Emitter Breakdown (Max) : 12V

Product Category : RF Bipolar Transistors

Gain : 19dB

Transistor Type : 2 NPN (Dual)

Minimum Quantity : 3000

Supplier Device Package : PG-SOT363-6

Noise Figure (dB Typ @ f) : 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Part Status : Active

Current - Collector (Ic) (Max) : 65mA

Power - Max : 450mW

Packaging : Tape & Reel (TR)

Frequency - Transition : 8GHz

DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 15mA, 8V

Operating Temperature : 150°C (TJ)

Package / Case : 6-VSSOP, SC-88, SOT-363

Mounting Type : Surface Mount

Series : -

Manufacturer : Infineon Technologies

Description : TRANS RF NPN 12V 65MA SOT363

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The BFS483H6327XTSA1,from Infineon Technologies,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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