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MT3S113TU,LF

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MT3S113TU,LF

Voltage - Collector Emitter Breakdown (Max) : 5.3V

Product Category : RF Bipolar Transistors

Gain : 12.5dB

Transistor Type : NPN

Minimum Quantity : 3000

Supplier Device Package : UFM

Noise Figure (dB Typ @ f) : 1.45dB @ 1GHz

Part Status : Active

Current - Collector (Ic) (Max) : 100mA

Power - Max : 900mW

Packaging : Tape & Reel (TR)

Frequency - Transition : 11.2GHz

DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V

Operating Temperature : 150°C (TJ)

Package / Case : 3-SMD, Flat Leads

Mounting Type : Surface Mount

Series : -

Manufacturer : Toshiba Semiconductor

Description : RF SIGE HETEROJUNCTION BIPOLAR N

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The MT3S113TU,LF,from Toshiba Semiconductor,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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