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K20E60W

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K20E60W

Product Category : MOSFET

Vgs (Max) : ±30V

Current - Continuous Drain (Id) @ 25°C : 20A (Ta)

FET Type : N-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 48nC @ 10V

Manufacturer : Toshiba

Minimum Quantity : 50

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : 150°C (TJ)

FET Feature : -

Series : DTMOSIV

Input Capacitance (Ciss) (Max) @ Vds : 1680pF @ 300V

Supplier Device Package : TO-220

Part Status : Active

Packaging : Tube

Rds On (Max) @ Id, Vgs : 155 mOhm @ 10A, 10V

Power Dissipation (Max) : 165W (Tc)

Package / Case : TO-220-3

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 3.7V @ 1mA

Drain to Source Voltage (Vdss) : 600V

Description : MOSFET N-CH 600V 20A TO-220

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